materials, chemical formulation, packaging approaches and nano-scale fabrication methodologies. This symposium will also provide an avenue for pertinent discussion to: (1.) methods to reduce effective interconnect resistivity; (2.) methods to mitigate electromigration and stress migration issues; (3.) advanced barrier/seed/plating processes including ALD, CVD and electroless deposition; (4.) porous low-k ILDs and air-gap based processing;. FET Technology Advanced cmos, Compound Semiconductor Devices (III-V, Group IV 2-D Materials FET, tfet, fdsoi, FinFETs, Nanowire FETs, Negative-Capacitance FET, and Oxide TFTs, Ferroelectric FETs. Electro-mechanical properties of SiGe layers, MEMs, TFTs,. Semiconductor wafer bonding continues to evolve as a crucial technology extending new integration schemes and disseminating new product architectures in such diverse areas as high quality silicon-on-insulator (SOI) materials for microelectronics device applications (high performance cmos logic platforms, bipolar, Bicmos, power strained Si layers. Damascene interconnects using copper or cobalt, introduced at the 10-20 nm node, are expected to be used for the foreseeable future. This meeting will provide a forum for reviewing and discussing materials and device related aspects of SiGe, Ge, and Related Compounds (e.g.
Corrosion Prevention 2015, paper 050 - Page
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Emerging Applications Nano-structured devices, quantum computing, THz devices, electro-mechanical properties of SiGe layers, MEMs, TFTs, amorphous SiGe layer applications. This symposium, sponsored by the Electronics Division of the Society, brings together materials, device and process engineers from these and related interdisciplinary areas. This symposium will address the most recent developments in thermoelectric and thermal interface materials and strategies for modern devices and applications. Besides permanent bonding, temporary wafer bonding technique deserves also to be discussed regarding all the recent development in many 3D applications.
Additional benefits of the 3D process include reduced die size and the ability to optimize distinct technologies (analog, logic, RF, etc.) on separate vertically interconnected layers. The fifteenth symposium solicits original theoretical and experimental papers that document new developments and cover the full range of basic science, process technologies, and product applications of semiconductor wafer bonding (direct, anodic, thermo-compression, eutectic, adhesive bonding). Thermal interface materials importantly help to transfer heat from hot spots to the cooling hardware, and advances in both thermoelectric materials and interface materials are required. However, continuous improvements and innovations are necessary to adapt this technology to aggressive scaling demands. Fundamental aspects of interest include surface preparations for bonding, film transferring, low temperature bonding, surface activation at bonding interfaces, bonding techniques, novel material composites to synthesize heterostructures.
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